SUM110N10-09
Vishay Siliconix
N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
100 0.0095 at V GS = 10 V
I D (A)
110 a
FEATURES
? TrenchFET ? Power MOSFET
? New Package with Low Thermal Resistance
? 100 % R g Tested
D
TO-263
G
G
D S
Top V ie w
S
Ordering Information: SUM110 N 10-09-E3 (Lead (P b )-free)
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
100
± 20
Unit
V
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy b
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I D
I DM
I AR
E AR
P D
T J , T stg
110 a
87 a
440
75
280
375 c
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount (TO-263) d
R thJA
R thJC
40
0.4
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
www.vishay.com
1
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